View S12XXXH_1303235.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

(R)
S12XXXH
SCR
FEATURES IT(RMS) = 12A VDRM = 200V to 800V High surge current capability
K A G
DESCRIPTION The S12XXXH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated (Plastic)
ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180 conduction angle) Average on-state current (180 conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C ) I2t Value for fusing Critical rate of rise of on-state current IG = 100 mA diG /dt = 1 A/s. Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5mm from case Tc= 90C Tc= 90C tp = 8.3 ms tp = 10 ms tp = 10 ms Value 12 7.6 132 120 72 100 - 40, + 150 - 40, + 125 260 A2s A/s C C Unit A A A
I2t dI/dt Tstg Tj Tl
Symbol VDRM VRRM
January 1995
Parameter B Repetitive peak off-state voltage Tj = 125C 200
Voltage D 400 M 600 N 800
Unit V
1/5
S12XXXH
THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Junction to ambient Junction to case for DC Parameter Value 60 3 Unit C/W C/W
GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions 06 VD=12V (DC) RL=33 Tj= 25C MIN MAX VGT VGD tgt IH IL VTM IDRM IRRM dV/dt VD=12V (DC) RL=33 VD=VDRM RL=3.3k VD=VDRM ITM= 3 x IT(AV) dIG/dt = 0.5A/s IG = 40mA IT= 250mA Gate open IG=1.2 IGT ITM= 24A tp= 380s VD = VDRM VR = VRRM VD=67%VDRM Gate open ITM= 3 x IT(AV) VR =35V dI/dt=10A/s tp=100s dV/dt=5V/s VD= 67%VDRM Tj= 25C Tj= 125C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 110C Tj= 110C Tj= 110C tq Tj= 110C MAX MIN TYP MAX MAX MAX MAX MAX MIN TYP MAX 10 100 s 15 30 0.5 5 Sensitivity 10 10 25 1.5 0.2 2 50 100 1.6 5 1.5 200 100 30 60 17 4 15 V V s mA mA V A mA V/s mA Unit IGM = 4A (tp = 20 s)
ORDERING INFORMATION
S
SCR MESA GLASS CURRENT
2/5
12
17
SENSITIVITY
M
H
PACKAGE : H = TO220 Non-insulated VOLTAGE
(R)
S12XXXH
Fig.1 : Maximum average power dissipation versus average on-state current. Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact.
P (W) Tcase (o C)
Rth = 0 o C/W o 2 C/W 4 o C/W 6 o C/W
P (W)
12
360
O
12
DC = 1 80
o o
-85
10 8 6
= 90 = 120
o
10 8 6
= 180o
-95
-105
4 2 0 0 1 2 3 4
= 30 o
= 60
o
4 -115 2
I T(AV)(A) Tamb ( C)
o
5
6
7
8
9
10 11 12
0 0
20
40
60
80
100
120
-125 140
Fig.3 : Average on-state current versus case temperature.
I T(AV) (A)
Fig.4 : Relative variation of thermal impedance versus pulse duration.
Zth/Rth 1
14
DC
12
Zt h( j-c)
10 8 6 4 2 0
0
Tcase ( C)
o
= 180
o
0.1
Zt h( j-a)
tp (s)
10 20 30 40 50 60 70 80 90 100 110 120 130
0.01 1E-3
1E-2
1E-1
1E +0
1 E +1
1E +2 5 E+2
Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature.
Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C]
Fig.6 : Non repetitive surge peak on-state current versus number of cycles.
ITSM(A)
2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Igt
140
Tj initial = 25 C
o
120 100 80 60 40 20
Tj(oC)
Ih
Number of cycles
-40
-20
0
20
40
60
80
100
120 140
0 1
10
100
100 0
3/5
(R)
S12XXXH
Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t.
I TSM (A). I2 t (A 2 s)
Fig.8 : On-state characteristics (maximum values).
I TM (A)
Tj initial = 25o C
1000
200 100
Tj initial o 25 C
I TSM
Tj max
100
I2 t
10
Tj max Vto =0.85 V Rt =0.030
tp(ms)
VTM (V)
10 1
10
1 0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
4/5
(R)
S12XXXH
PACKAGE MECHANICAL DATA TO220 Non-insulated (Plastic) DIMENSIONS Millimeters Inches Typ. Min. Max. Typ. Min. Max. A G I B C O P N1 N F D M L J H A B C D F G H I J L M N N1 O P Marking : type number Weight : 1.8 g 2.54 1.2 1.4 1.15 2.7 5.3 0.100 0.047 0.055 0.045 4.5 3.53 1.2 6.3 12.7 4.2 3.0 4.7 3.66 1.3 0.9 0.106 0.209 10.3 6.5 9.1 0.500 0.165 0.118 0.177 0.185 0.139 0.144 0.047 0.051 0.035 0.248 0.256 0.358 0.406
REF.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
(c) 1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5
(R)

▲Up To Search▲

Price & Availability of S12XXXH

	To Download S12XXXH Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .